TRF7963RHBT, TRF8010, TRF8010PWP Selling Leads, Datasheet
MFG:TI Package Cooled:QFN D/C:07+
TRF7963RHBT, TRF8010, TRF8010PWP Datasheet download
Part Number: TRF7963RHBT
MFG: TI
Package Cooled: QFN
D/C: 07+
TRF7963RHBT, TRF8010, TRF8010PWP
- Table of contents:
Info of TRF7963RHBT
Info of TRF8010
Info of TRF8010PWP
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About TRF1015
PDF/DataSheet Download
Datasheet: TRF1015
File Size: 299715 KB
Manufacturer: TI [Texas Instruments]
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About TRF8010
PDF/DataSheet Download
Datasheet: TRF8010
File Size: 189574 KB
Manufacturer: TI [Texas Instruments]
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About TRF8010PWP
PDF/DataSheet Download
Datasheet: TRF8010PWP
File Size: 189574 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
TRF8010 General Description
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time division multiple access) applications. Very few external components are required for operation.
The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of RFOUT is approximately 50 Ω. But, since RFOUT is connected to an open-collector output device, minimal external matching is required.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems. The power control signal causes a linear change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to 3 V increases the output power from a typical value of 54 dBm at VPC = 0 V to the output power appropriate for the application:
` 21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular) operation
` 23 dBm typical for GSM (Global System for Mobile Communications) operation
Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.
TRF8010 Maximum Ratings
Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 5.6 V
Input voltage range at TXEN, VPC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 5.6 V
Input power at RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Thermal resistance, junction to case, RJC (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Thermal resistance, junction to ambient, RJA (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32°C/W
Continuous total power dissipation at TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9 W
Operating junction temperature, TJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C
Junction temperature, TJ max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 100°C
Input voltage range at TXEN, VPC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 5.6 V
Input power at RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Thermal resistance, junction to case, RJC (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Thermal resistance, junction to ambient, RJA (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32°C/W
Continuous total power dissipation at TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9 W
Operating junction temperature, TJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C
Junction temperature, TJ max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 100°C
TRF8010 Features
· Operates from 3.6-V and 4.8-V Power Supplies for AMPS/NADC and GSM Applications Respectively
· Unconditionally Stable
· Wide UHF Frequency Range 800 MHz to 1000 MHz
· 21 dBm and 23 dBm Typical Output Power in AMPS/NADC and GSM Applications Respectively
· Linear Ramp Control
· Transmit Enable/Disable Control
· Advanced BiCMOS Processing Technology for Low-Power Consumption, High Efficiency, and Highly Linear Operation
· Minimum of External Components Required for Operation
· Surface-Mount Thermally Enhanced Package for Extremely Small Circuit Footprint
TRF8010 Connection Diagram
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