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· Low power applications · Very low noise figure · High transition frequency fT = 12 GHz
TSDF1205W Typical Application
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
TSDF1220 Maximum Ratings
Parameter
Test Conditions
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
9
V
Collector-Emitter Voltage
VCEO
6
V
Emitter-Base Voltage
VEBO
2
V
Collector Current
IC
40
mA
Total power dissipation
Tamb 60
Ptot
200
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
- 65 to +150
TSDF1220 Features
· Low power applications · Very low noise figure · High transition frequency fT = 12 GHz
TSDF1220 Typical Application
For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TVsystems (e.g., satellite tuners) up to microwave frequencies.