MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:sgs D/C:dc00
TYN612MBRG, TYN612MFP, TYN612MFPRG Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: sgs
D/C: dc00
Description: SCR 600V 12A TO-220FPAB
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PDF/DataSheet Download
Datasheet: TYN 0510 --->TYN 1010
File Size: 60600 KB
Manufacturer: STMicro
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TYN612MFP
File Size: 73920 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TYN612MFPRG
File Size: 73920 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | TYN612MFP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| SCR Type | Standard Recovery |
| Voltage - Off State | 600V |
| Current - On State (It (RMS) (Max) | 12A |
| Current - On State (It (AV)) (Max) | 8A |
| Current - Gate Trigger (Igt) (Max) | 5mA |
| Current - Hold (Ih) (Max) | 20mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 120A, 125A |
| Voltage - Gate Trigger (Vgt) (Max) | 1.3V |
| Mounting Type | Through Hole |
| Package / Case | TO-220FPAB |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TYN612MFP TYN612MFP 497 4486 5 ND 49744865ND 497-4486-5 |
The TYN612M SCR is suitable to fit modes of control found in applications such as voltage regulation circuits for motorbikes, overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition.
The insulated fullpack package allows a back to back configuration.
|
Symbol |
Parameter |
Value |
Unit | ||
|
IT(RMS) |
RMS on-state current (180° conduction angle) |
TO-220AB |
Tc=105°C |
12 |
A |
|
TO-220FPAB |
Tc=70°C |
12 | |||
|
IT(AV) |
Average on-state current (180° conduction angle) |
TO-220AB |
Tc=105°C |
8 |
A |
|
TO-220FPAB |
Tc=70°C |
8 | |||
|
ITSM |
Non repetitive surge peak on-state current |
tp = 8.3 ms |
Tj = 25°C |
125 |
A |
|
tp = 10 ms |
120 | ||||
|
I2t |
I2t Value for fusing |
tp = 10 ms |
Tj = 25°C |
72 |
A2s |
|
dI/dt |
Critical rate of rise of on-state current Gate IG = 2 * IGT, tr 100 ns |
F = 60 Hz |
Tj = 125°C |
50 |
A/s |
|
IGM |
Peak gate current |
tp = 20 s |
Tj = 125°C |
4 |
A |
|
PG(AV) |
Average gate power dissipation |
Tj = 125°C |
1 |
W | |
|
Tstg Tj |
Storage junction temperature range Operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C | ||
|
VRGM |
Maximum peak reverse gate voltage |
5 |
V | ||
|
Symbol |
Value |
Unit |
|
IT(RMS) |
12 |
A |
|
VDRM/VRRM |
600 |
V |
|
IGT (min./max.) |
1.5/5 |
mA |
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