TYNX12, TYNX16, TYNX16RG Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
MFG:ST Package Cooled:09+ D/C:TO
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PDF/DataSheet Download
Datasheet: TYNx12
File Size: 125576 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: TYNx16
File Size: 95075 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TYNx16RG
File Size: 95075 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Available either in sensitive (TS12) or standard (TYN, TN12...) gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits, capacitive discharge ignition, voltage regulation circuits...
Available in though-hole or surface-mount packages, they provide an optimized performance in a limited space area.
Symbol |
Parameter |
Value |
Unit | |||
IT(RMS) |
RMS on-state current (180° conduction angle) |
Tc = 105 |
12 |
A | ||
IT(AV) |
Average on-state current (180° conduction angle) |
Tc = 105 |
8 |
A | ||
DPAK/IPAK |
D²PAK /TO220AB |
|||||
ITSM |
Non repetitive surge peak on-state current |
tp = 8.3 ms |
Tj = 25 |
115 |
146 |
A |
tp = 10 ms |
110 |
140 | ||||
I²t |
I²t Value for fusing |
tp = 10 ms |
Tj = 25 |
60 |
98 |
A²S |
dI/dt |
Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns |
F = 60 Hz |
Tj = 125 |
50 |
A/µs | |
IGM |
Peak gate current |
tp = 20 µs |
Tj = 125 |
4 |
A | |
PG(AV) |
Average gate power dissipation |
Tj = 125 |
1 |
W | ||
Tstg Tj |
Storage Temperature Operating Junction Temperature |
- 40 to + 150 - 40 to + 125 |
||||
VRGM |
Maximum peak reverse gate voltage (for TN12 & TYN) |
5 |
V |
The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.
Symbol |
Parameter |
Value |
Unit | ||
IT(RMS) |
RMS on-state current (180° conduction angle) |
Tc = 110 |
16 |
A | |
IT(AV) |
Average on-state current (180° conduction angle) |
Tc = 110 |
10 |
A | |
ITSM |
Non repetitive surge peak on-state current |
tp = 8.3 ms |
Tj = 25 |
200 |
A |
tp = 10 ms |
190 | ||||
I²t |
I²t Value for fusing |
tp = 10 ms |
Tj = 25 |
180 |
A²S |
dI/dt |
Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns |
F = 60 Hz |
Tj = 125 |
50 |
A/µs |
IGM |
Peak gate current |
tp = 20 µs |
Tj = 125 |
4 |
A |
PG(AV) |
Average gate power dissipation |
Tj = 125 |
1 |
W | |
Tstg Tj |
Storage Temperature Operating Junction Temperature |
- 40 to + 150 - 40 to + 125 |
|||
VRGM |
Maximum peak reverse gate voltage (for TN12 & TYN) |
5 |
V |