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*1 Not to exceed 200mW per element. *2 Not to exceed 120mW per element.
UMN11N Features
1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package.
UMN11N Typical Application
Ultra high speed switching
UMN11NTN Parameters
Technical/Catalog Information
UMN11NTN
Vendor
Rohm Semiconductor
Category
Discrete Semiconductor Products
Diode Type
Standard
Diode Configuration
2 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
80V
Current - Average Rectified (Io) (per Diode)
100mA
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-323-6, SOT-363
Packaging
Tape & Reel (TR)
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
UMN11NTN UMN11NTN
UMN1N Maximum Ratings
Type
Peak reverse voltage VRM (V)
8DC reverse voltage VR (V)
Peak forward current IFM (mA)
Mean rectifying current IO (mA)
Surge current (1s) Isurge (A)
Power dissipation (TOTAL) Pd (mW)
Junction temperature Tj (°C)
Storage temperature Tstg (°C)
FMN1 UMN1N
80
80
80
25
20.25
150/80
150
−55∼+150
FMP1 UMP1N
80
80
80
25
0.25
150/80
150
−55∼+150
IMN10
80
80
300
100
4
300 *1
150
−55∼+150
IMN11 UMN11N
80
80
300
100
4
150 *2
150
−55∼+150
IMP11 UMP11N
80
80
300
100
4
150 *2
150
−55∼+150
*1 Not to exceed 200mW per element. *2 Not to exceed 120mW per element.
UMN1N Features
1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package.