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· The US5U29 conbines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package. · Pch MOSFET have a low on-state resistance with a fast switching. · Pch MOSFET is reacted a low voltage drive(2.5V) · The Independently connected Schottky barrier diode have a low forward voltate.
US5U29 Typical Application
·Load switch, DC/DC conversion
US5U30 Maximum Ratings
Parameter
Symbol
Limits
Unit
Drain−source voltage
VDSS
-20
V
Gate−source voltage
VGSS
±12
V
Drain current Continuous
ID
±1
A
Pulsed
IDP
±4
APW 10s DUTY CYCLE 1%
Source current Continuous (Body diode) Pulsed
IS ISP
−0.4 −4
APW 10s DUTY CYCLE 1%
Channel temperature
Tch
150
C
Repetitive peak reverse voltage
VRM
25
V
Reverse voltage
VR
20
V
Forward current
IF
0.7
A
Forward current surge peak
IFSM
3.0
A W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Junction temperature
Tj
150
°C
Total power dissipation
PD
1.0
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Range of storage temperature
Tstg
−55 to +125
°C
US5U30 Features
· The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. · Pch MOSFET have a low on-state resistance with a fast switching. · Pch MOSFET is reacted a low voltage drive(2.5V) · The Independently connected Schottky barrier diode have a low forward voltate.