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USB1, USB10H, USB1T

Table of contents:
Info of USB1
Info of USB10H
Info of USB1T

USB1, USB10H, USB1T Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP D/C:original stock

USB1, USB10H, USB1T Datasheet download

Five Points

Part Number: USB10H

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOP

D/C: original stock

Description: MOSFET P-CH DUAL 20V SSOT6

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USB10H Parameters

Technical/Catalog Information	USB10H
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.9A
Rds On (Max) @ Id, Vgs	170 mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) @ Vds	441pF @ 10V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.2nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	USB10H USB10H

USB10H General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

USB10H Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-1.9 -5	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	0.96 0.9 0.7	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	130	°C/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	60	°C/W

USB10H Features

• -1.9 A, -20 V. R_DS(on) = 0.170 @ V_GS = -4.5 V R_DS(on) = 0.250 @ V_GS = -2.5 V
• Low gate charge (3 nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

USB10H Typical Application

• Load switch
• Battery protection
• Power management

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