VF30100SG, VF30120C, VF30120C-E3/4W Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-220AB D/C:2010+
VF30100SG, VF30120C, VF30120C-E3/4W Datasheet download
Part Number: VF30100SG
MFG: Vishay
Package Cooled: TO-220AB
D/C: 2010+
VF30100SG, VF30120C, VF30120C-E3/4W
- Table of contents:
Info of VF30100SG
Info of VF30120C
Info of VF30120C-E3/4W
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About VF315
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Datasheet: VF315
File Size: 71038 KB
Manufacturer: ETC [ETC]
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About VF315
PDF/DataSheet Download
Datasheet: VF315
File Size: 71038 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF315
PDF/DataSheet Download
Datasheet: VF315
File Size: 71038 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
VF30100SG General Description
V30100SG, VF30100SG, VB30100SG & VI30100SG datasheet
VF30100SG Maximum Ratings
| PARAMETER | SYMBOL |
V30100SG |
VF30100SG |
VB30100SG |
VI30100SG |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
100 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
30 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
250 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
- 40 to + 150 |
||||
VF30100SG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF30100SG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VF30120C General Description
V30120C, VF30120C, VB30120C & VI30120C datasheet
VF30120C Maximum Ratings
| PARAMETER | SYMBOL | V30120C | VF30120C | VB30120C | VI30120C | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |||
| Maximum average forward rectified current (Fig. 1)per device per diode |
IF(AV) | 30 15 |
A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 150 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF30120C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power osses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum eak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)
• Component in accordance to RoHS 2002/95/EC nd WEEE 2002/96/EC
• Low forward voltage drop, low power osses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum eak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)
• Component in accordance to RoHS 2002/95/EC nd WEEE 2002/96/EC
VF30120C Typical Application
For use in high frequency inverters, switching power upplies, freewheeling diodes, OR-ing diode, dc-to-dc onverters and reverse battery protection.
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