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W981616BH, W981616BH6, W981616BH7

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Info of W981616BH
Info of W981616BH6
Info of W981616BH7

W981616BH, W981616BH6, W981616BH7 Selling Leads, Datasheet

MFG:WINBOND Package Cooled:TSOP50 D/C:2006

W981616BH, W981616BH6, W981616BH7 Picture

W981616BH, W981616BH6, W981616BH7 Datasheet download

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Part Number: W981616BH

MFG: WINBOND

Package Cooled: TSOP50

D/C: 2006

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W981616BH General Description

W981616BH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words *2 banks * 16 bits. Using pipelined architecture and 0.175 mm process technology, W981616BH delivers a data bandwidth of up to 332M bytes per second (-5). For different applications the W981616BH is sorted into the following speed grades: -5, -6, and 7(L).

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W981616BH is ideal for main memory in high performance applications.

W981616BH Maximum Ratings

ITEM	SYMBOL	RATING	UNIT	NOTES
Input, Output Voltage	V_IN,V_OUT	-0.3~ V_cc +0.3	V	1
Power Supply Voltage	V_CC,V_CCQ	-0.3~4.6	V	1
Operating Temperature	T_OPR	0~70	°C	1
Storage Temperature	T_STG	-55~150	°C	1
Soldering Temperature(10s)	T_SOLDER	260	°C	1
Power Dissipation	P_D	1	W	1
Short Circuit Output Current	I_OUT	50	mA	1

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.

W981616BH Features

· 3.3V ±0.3V power supply
· Up to 166 MHz clock frequency
· 524,288 words x 2 banks x 16 bits organization
· Auto Refresh and Self Refresh
· CAS latency: 2 and 3
· Burst Length: 1, 2, 4, 8, and full page
· Burst read, Single Write Mode
· Byte data controlled by UDQM and LDQM
· Auto-precharge and controlled precharge
· 4K refresh cycles/64 mS
· Interface: LVTTL
· Packaged in 50-pin, 400 mil TSOP II

W981616BH Connection Diagram

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