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WS27C010-15DMB, WS27C010F-15DMB, WS27C010L

Table of contents:
Info of WS27C010-15DMB
Info of WS27C010F-15DMB
Info of WS27C010L

WS27C010-15DMB, WS27C010F-15DMB, WS27C010L Selling Leads, Datasheet

MFG:29 Package Cooled:WSI D/C:0317

WS27C010-15DMB, WS27C010F-15DMB, WS27C010L Picture

WS27C010-15DMB, WS27C010F-15DMB, WS27C010L Datasheet download

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Part Number: WS27C010-15DMB

MFG: 29

Package Cooled: WSI

D/C: 0317

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WS27C010L General Description

The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.

The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with a very fast 35 nsec TOE output enable time.

The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade density paths for existing 128K and 256K EPROM users.

WS27C010L Maximum Ratings

Storage Temperature.......................65° to + 150°C
Voltage on any Pin with
Respect to Ground ................................0.6V to +7V
VPP with Respect to Ground...............0.6V to + 14V
VCC Supply Voltage with
Respect to Ground ................................0.6V to +7V
ESD Protection...............................................>2000V

WS27C010L Connection Diagram

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