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This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
ZXM64N03X Maximum Ratings
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate Source Voltage
VGS
± 20
V
Continuous Drain Current VGS=10V; TA=25°C(b) VGS=10V; TA=70°C(b)
ID
5.0 4.0
A
Pulsed Drain Current (c)
IDM
30
A
Continuous Source Current (Body Diode) (b)
IS
2.4
A
Pulsed source current (body diode) (c)
ISM
30
A
Power Dissipation at TA=25°C (a) Linear Derating Factor
PD
1.1 8.8
W mW/°C
Power Dissipation at TA=25°C (b) Linear Derating Factor