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BYV27 200
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BYV27200200V
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NPN silicon RF power transistor, DIP, 9.5 dB, 40 W, 175 MHz, 9.0 A, 36 V
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SMD Inductor, good heat durability, Lead-free material, excellent connection reliability, 0.01μH t...
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GTR module, 1200V, 50A, 350W, MG50Q6ES50A, Toshiba
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