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MC10EP08DR2
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MC10EP08DR2G
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high speed, high voltage, N-channel, switch-mode, power MOSFET, TO-247, 135A, ±30V
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1200V, 200A, Low inductance module structure, IGBT module, 2MBI200S-120
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Price: 0.1-0.2 USD
Spartan-3E Field-Programmable Gate Array, 250K, 100VQFP, –0.5V to 1.32V, –200V to +200V
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Price: 0.04-0.06 USD
low current, 1.2 to 37v, adjustable voltage regulator, TO92, 100 mA
LTC3204EDC-5
Price: 1-10000000 USD
QFN6, 1.2MHz, switched capacitor voltage doubler, 1.8V to 4.5V, 150mA, low noise
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