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MC10H1234LDS
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About MC10H1...
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N-channel silicon power MOS-FET, Super FAP-G Series, 300v drain source
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600V, 40A, Field Stop IGBT, TO-247, High current capability, Fast switching
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Intel-StrongARM SA-1110 Microprocessor, 32-bit RISC microprocessor, 8 Kbyte write-back data cache ...
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