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MOCD211R2VM
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MOCD211R2VM_NL
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About MOCD21...
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NPN Silicon RF power transistor, DIP, 65 V, 4 A, 110 W, 10 dB, 60 pF
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3-Terminal, Positive Regulator, SOIC-8, Internally Limited, 1kV, Output current 100 mA
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Surface Mount, Schottky Barrier Rectifier, DO214, 40V, 20 mJ, 75 A, High surge capability
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Price: 15.5-30 USD
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large capacitance, aluminum electrolytic capacitor, 120 uF, 315 V, Non solvent-proof type
AT89C52-24PC
Price: 0.78-0.78 USD
CMOS 8-bit microcomputer, DIP, -1.0V to +7.0V, Fully Static Operation, Programmable Serial Channel
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