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16TQC68M, 16TSSOPDUMMYAAP, 16TTS

Table of contents:
Info of 16TQC68M
Info of 16TSSOPDUMMYAAP
Info of 16TTS

16TQC68M, 16TSSOPDUMMYAAP, 16TTS Selling Leads, Datasheet

MFG:SANYO Package Cooled:N/A D/C:146

16TQC68M, 16TSSOPDUMMYAAP, 16TTS Picture

16TQC68M, 16TSSOPDUMMYAAP, 16TTS Datasheet download

Five Points

Part Number: 16TQC68M

MFG: SANYO

Package Cooled: N/A

D/C: 146

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16TTS General Description

The 16TTS..S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level.

16TTS Maximum Ratings

PARAMETER	SYMBOL	TEST CONDITIONS		VALUES		UNITS
				TYP.	MAX.
Maximum average on-state current	I_T(AV)	T_C = 98 , 180° conduction, half sine wave		10		A
Maximum RMS on-state current	I_RMS			16
Maximum peak, one-cycle, non-repetitive surge current	I_TSM	10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied		170 200
Maximum I2t for fusing	I²t	10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied		144 200		A²s
Maximum I2t for fusing Maximum on-state voltage drop	I²t V_TM	t = 0.1 to 10 ms, no voltage reapplied 10 A, T_J= 25		2000 1.4		A²s V
On-state slope resistance Threshold voltage	r_t V_T(TO)	T_J = 125		24.0 1.1		m V
Maximum reverse and direct leakage current	I_RM/I_DM	T_J = 25 T_J = 125	V_R = Rated V_RRM/V_DRM	0.5 10		mA
Holding current Maximum latching current	I_H I_L	Anode supply = 6 V, resistive load, initial I_T= 1A Anode supply = 6 V, resistive load		-	100
				200
Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current	dV/dt dI/dt			500 150		V/s A/s

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