Purchase 16TTS..FPPbF, In-stock 16TTS..FPPbF From SeekIC.
Part Number: 16TTS..FPPbF
Description: The 16TTS..FPPbF High Voltage Series of silicon controlled rectifiers are specifically designed for me...
- Table of contents:
16TTS..FPPbF
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DataSheet
General Description
16TTS..FPPbF General Description
The 16TTS..FPPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology
used has reliable operation up to 125 junction temperature.
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.
Fully isolated package (VINS = 2500 VRMS) is UL E78996 approved
This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix).
16TTS..FPPbF Maximum Ratings
| PARAMETER | SYMBOL | TEST CONDITIONS | VALUES | UNITS | ||
| TYP. | MAX | |||||
| Maximum average on-state current | IT(AV) | Tc = 95, 180° conduction, half sine wave | 10 | A | ||
| Maximum RMS on-state current | IRMS | 16 | ||||
| Maximum peak, one-cycle, non-repetitive surge current |
ITSM | 10 ms sine pulse, rated VRRM applied | 170 | |||
| 10 ms sine pulse, no voltage reapplied | 200 | |||||
| Maximum I2t for fusing | I2t | 10 ms sine pulse, rated VRRM applied | 144 | A2s | ||
| 10 ms sine pulse, no voltage reapplied | 200 | |||||
| Maximum I2t for fusing | I2t | t = 0.1 to 10 ms, no voltage reapplied | 2000 | A2s | ||
| Maximum on-state voltage drop | VTM | 10 A, TJ = 25 | 1.4 | V | ||
| On-state slope resistance | rt | TJ = 125 | 24.0 | m | ||
| Threshold voltage | VT(TO) | 1.1 | V | |||
| Maximum reverse and direct leakage current | IRM/IDM | TJ = 25 | VR = Rated VRRM/VDRM | 0.5 | mA | |
| TJ = 125 | 10 | |||||
| Holding current | IH | Anode supply = 6 V, resistive load, initial IT = 1 A 16TTS08FP, 16TTS12FP |
- | 100 | ||
| Maximum latching current | IL | Anode supply = 6 V, resistive load | 200 | mA | ||
| Maximum rate of rise of off-state voltage | dV/dt | 500 | V/s | |||
| Maximum rate of rise of turned-on current | dI/dt | 150 | V/s | |||
16T202DA1J
PDF/DataSheet Download
- Datasheet: 16T202DA1J
- File Size: 393771 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·16TTS
- IRF [International Rectifier]
- PHASE CONTROL SCR
- 122614 KB
- ·16TTS..S
- IRF [International Rectifier]
- SURFACE MOUNTABLE PHASE CONTROL SCR
- 122614 KB
- ·16TTS08
- IRF [International Rectifier]
- PHASE CONTROL SCR
- 95957 KB
- ·16TTS08FP
- IRF [International Rectifier]
- PHASE CONTROL SCR TO-220 FULLPAK
- 122614 KB
- ·16TTS08STRL
- IRF [International Rectifier]
- SURFACE MOUNTABLE PHASE CONTROL SCR
- 122614 KB
- ·16TTS08STRR
- IRF [International Rectifier]
- SURFACE MOUNTABLE PHASE CONTROL SCR
- 122614 KB
- ·16TTS12
- IRF [International Rectifier]
- PHASE CONTROL SCR
- 95957 KB
- ·16TTS12FP
- IRF [International Rectifier]
- PHASE CONTROL SCR TO-220 FULLPAK
- 122614 KB
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