1N829, 1N829A, 1N82AG Selling Leads, Datasheet
MFG:C.D.I. Package Cooled:N/A D/C:2010+
1N829, 1N829A, 1N82AG Datasheet download
Part Number: 1N829
MFG: C.D.I.
Package Cooled: N/A
D/C: 2010+
1N829, 1N829A, 1N82AG
- Table of contents:
Info of 1N829
Info of 1N829A
Info of 1N82AG
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About 1N829,A
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Datasheet: 1N829,A
File Size: 42873 KB
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About 1N829AUR
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Datasheet: 1N829AUR
File Size: 200856 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
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About 1N821
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Datasheet: 1N821
File Size: 372776 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
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1N829 General Description
The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature when operated at 7.5 mA. These glass axialleaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV, and JANS military qualifications. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages up to 200 V.
1N829 Maximum Ratings
Operating & StorageTemperature: -65oC to +175oC
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 70 mA. NOTE: For optimum
voltage-temperature stability, IZ = 7.5 mA (less than 50
mW in dissipated power)
Solder temperatures: 260 oC for 10 s (maximum)
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 70 mA. NOTE: For optimum
voltage-temperature stability, IZ = 7.5 mA (less than 50
mW in dissipated power)
Solder temperatures: 260 oC for 10 s (maximum)
1N829 Features
• JEDEC registered 1N821 thru 1N829 series
• Internal metallurgical bonds
• Double anode option with 1N822 and 1N824 selection
• Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options at nominal of 6.35 V
• 1N821, 823, 825, 827 and 829 also have military qualification to MIL-PRF-19500/159 up to the JANS level by adding JAN, JANTX, JANTXV, or JANS prefixes to part numbers as well as the "-1" suffix, e.g. JANTX1N829-1, etc.
• Radiation Hardened devices available by changing "1N" prefix to "RH", e.g. RH827, RH 829, RH829A, etc. Also consult factory for "RH" data sheet brochure
• Military surface mount equivalents also available in DO-213AA with UR-1 suffix and JAN, JANTX, or JANTXV prefix, e.g. JANTX1N829UR-1 (see separate data sheet)
• Also available in smaller axial-leaded DO-35 package (see separate data sheet)
• Internal metallurgical bonds
• Double anode option with 1N822 and 1N824 selection
• Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options at nominal of 6.35 V
• 1N821, 823, 825, 827 and 829 also have military qualification to MIL-PRF-19500/159 up to the JANS level by adding JAN, JANTX, JANTXV, or JANS prefixes to part numbers as well as the "-1" suffix, e.g. JANTX1N829-1, etc.
• Radiation Hardened devices available by changing "1N" prefix to "RH", e.g. RH827, RH 829, RH829A, etc. Also consult factory for "RH" data sheet brochure
• Military surface mount equivalents also available in DO-213AA with UR-1 suffix and JAN, JANTX, or JANTXV prefix, e.g. JANTX1N829UR-1 (see separate data sheet)
• Also available in smaller axial-leaded DO-35 package (see separate data sheet)
1N829 Typical Application
• Provides minimal voltage changes over a broad temperature range
• For instrumentation and other circuit designs requiring a stable voltage reference
• Maximum temperature coefficient selections available from 0.01%/ºC to 0.0005%/ºC
• Tight voltage tolerances with nominal reference voltages of 6.35 V available by adding tolerance 1%, 2%, 3%, etc. after the part number for identification e.g. 1N827-2%, 1N829A -1%, 1N829- 1-1%, etc.
• Flexible axial-lead mounting terminals
• Nonsensitive to ESD per MIL-STD-750 Method 1020
1N829A Maximum Ratings
Operating Temperature: - 65 to +175
Storage Temperature: -65 to +175
DC Power Dissipation: 500mW @ +50
Power Derating: 4 mW / above +50
Storage Temperature: -65 to +175
DC Power Dissipation: 500mW @ +50
Power Derating: 4 mW / above +50
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