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28F002B1, 28F008SA-120, 28F010

28F002B1, 28F008SA-120, 28F010 Selling Leads, Datasheet

MFG:SST  Package Cooled:TSOP  D/C:00+

28F002B1, 28F008SA-120, 28F010 Picture

28F002B1, 28F008SA-120, 28F010 Datasheet download

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Part Number: 28F002B1

 

MFG: SST

Package Cooled: TSOP

D/C: 00+

 

 

 
 
 
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  • 28F004B5

  • Vendor: MT Pack: IC Qty: 224  Adddate: 2020-04-05
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  • A_COMTECH TECHNOLOGY LTDA   Brazil
    Contact: Mr.LuizCamargo   MSN:A_comtech@hotmail.com
    Tel: 055-41-3347-2774
    Fax: 055-41-3248-2879
    (616)
  • 28F010

  • Vendor: CSI Pack: DIP Qty: 5000 Note: 3-4 Days  Adddate: 2020-04-05
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  • Hongkong Uptrend Technology   China
    Contact: Ms.LinLisa   MSN:kenny_ic@hotmail.com
    Tel: 86-755-22205904
    Fax: 86-755-22205804
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About 28F001BX

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Datasheet: 28F001BX

File Size: 663587 KB

Manufacturer: Intel

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  • 28F004B5

  • Vendor: MT Pack: IC Qty: 224  Adddate: 2020-04-05
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  • A_COMTECH TECHNOLOGY LTDA   Brazil
    Contact: Mr.LuizCamargo   MSN:A_comtech@hotmail.com
    Tel: 055-41-3347-2774
    Fax: 055-41-3248-2879
    (616)
  • 28F010

  • Vendor: CSI Pack: DIP Qty: 5000 Note: 3-4 Days  Adddate: 2020-04-05
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  • Hongkong Uptrend Technology   China
    Contact: Ms.LinLisa   MSN:kenny_ic@hotmail.com
    Tel: 86-755-22205904
    Fax: 86-755-22205804
    (5)

About 28F001BX

PDF/DataSheet Download

Datasheet: 28F001BX

File Size: 663587 KB

Manufacturer: Intel

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28F010 Suppliers

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  • 28F010

  • Vendor: CSI Pack: DIP Qty: 5000 Note: 3-4 Days  Adddate: 2020-04-05
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  • Hongkong Uptrend Technology   China
    Contact: Ms.LinLisa   MSN:kenny_ic@hotmail.com
    Tel: 86-755-22205904
    Fax: 86-755-22205804
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About 28F010

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Datasheet: 28F010

File Size: 415519 KB

Manufacturer: INTEL [Intel Corporation]

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28F010 General Description

Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on- board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel's 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.

Extended erase and program  cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable  cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 performs 100,000 erase and program  cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.

Intel's 28F010 employs advanced CMOS circuitry for  systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to VCC + 1 V.

With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.

28F010 Maximum Ratings

Operating Temperature
   During Read.................................0 °C to +70 °C(1)
    During Erase/Program................0 °C to +70 °C(1)
Operating Temperature
    During Read...........................40 °C to +85 °C(2)
    During Erase/Program............40 °C to +85 °C(2)
Temperature Under Bias............10 °C to +80 °C(1)
Temperature Under Bias............50 °C to +95 °C(2)
Storage Temperature.................. 65 °C to +125 °C
Voltage on Any Pin with
    Respect to Ground ....................2.0 V to +7.0 V(3)
Voltage on Pin A9 with
    Respect to Ground ............. 2.0 V to +13.5 V(3, 4)
VPP Supply Voltage with
    Respect to Ground
    During Erase/Program........ 2.0 V to +14.0 V(3, 4)
VCC Supply Voltage with
    Respect to Ground ....................2.0 V to +7.0 V(3)
Output Short Circuit Current........................ 100 mA(5)

28F010 Features

Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program
2 Second Chip-Program
100,000 Erase/Program Cycles
12.0 V ±5% VPP
High-Performance Read
 90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
   (See Packaging Spec., Order #231369)
Extended Temperature Options

28F010 Connection Diagram

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