28F002B1, 28F008SA-120, 28F010 Selling Leads, Datasheet
MFG:SST Package Cooled:TSOP D/C:00+
28F002B1, 28F008SA-120, 28F010 Datasheet download
Part Number: 28F002B1
MFG: SST
Package Cooled: TSOP
D/C: 00+
28F002B1, 28F008SA-120, 28F010
- Table of contents:
Info of 28F002B1
Info of 28F008SA-120
Info of 28F010
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About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
About 28F010
PDF/DataSheet Download
Datasheet: 28F010
File Size: 415519 KB
Manufacturer: INTEL [Intel Corporation]
Download : Click here to Download
28F010 General Description
Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on- board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel's 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 performs 100,000 erase and program cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to VCC + 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel's 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 performs 100,000 erase and program cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to VCC + 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.
28F010 Maximum Ratings
Operating Temperature
During Read.................................0 °C to +70 °C(1)
During Erase/Program................0 °C to +70 °C(1)
Operating Temperature
During Read...........................40 °C to +85 °C(2)
During Erase/Program............40 °C to +85 °C(2)
Temperature Under Bias............10 °C to +80 °C(1)
Temperature Under Bias............50 °C to +95 °C(2)
Storage Temperature.................. 65 °C to +125 °C
Voltage on Any Pin with
Respect to Ground ....................2.0 V to +7.0 V(3)
Voltage on Pin A9 with
Respect to Ground ............. 2.0 V to +13.5 V(3, 4)
VPP Supply Voltage with
Respect to Ground
During Erase/Program........ 2.0 V to +14.0 V(3, 4)
VCC Supply Voltage with
Respect to Ground ....................2.0 V to +7.0 V(3)
Output Short Circuit Current........................ 100 mA(5)
During Read.................................0 °C to +70 °C(1)
During Erase/Program................0 °C to +70 °C(1)
Operating Temperature
During Read...........................40 °C to +85 °C(2)
During Erase/Program............40 °C to +85 °C(2)
Temperature Under Bias............10 °C to +80 °C(1)
Temperature Under Bias............50 °C to +95 °C(2)
Storage Temperature.................. 65 °C to +125 °C
Voltage on Any Pin with
Respect to Ground ....................2.0 V to +7.0 V(3)
Voltage on Pin A9 with
Respect to Ground ............. 2.0 V to +13.5 V(3, 4)
VPP Supply Voltage with
Respect to Ground
During Erase/Program........ 2.0 V to +14.0 V(3, 4)
VCC Supply Voltage with
Respect to Ground ....................2.0 V to +7.0 V(3)
Output Short Circuit Current........................ 100 mA(5)
28F010 Features
Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program
2 Second Chip-Program
100,000 Erase/Program Cycles
12.0 V ±5% VPP
High-Performance Read
90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
Extended Temperature Options
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program
2 Second Chip-Program
100,000 Erase/Program Cycles
12.0 V ±5% VPP
High-Performance Read
90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
Extended Temperature Options
28F010 Connection Diagram
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