2N6897, 2N6898, 2N69 Selling Leads, Datasheet
MFG:MOT/ON/ST Package Cooled:TO-3 D/C:07+
2N6897, 2N6898, 2N69 Datasheet download
Part Number: 2N6897
MFG: MOT/ON/ST
Package Cooled: TO-3
D/C: 07+
2N6897, 2N6898, 2N69
- Table of contents:
Info of 2N6897
Info of 2N6898
Info of 2N69
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About 2N6897
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Datasheet: 2N6897
File Size: 65912 KB
Manufacturer:
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About 2N6027
PDF/DataSheet Download
Datasheet: 2N6027
File Size: 181809 KB
Manufacturer: ONSEMI [ON Semiconductor]
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About 2N690
PDF/DataSheet Download
Datasheet: 2N690
File Size: 88304 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
2N6897 General Description
The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit.
2N6897 Maximum Ratings
Drian to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . BVDSS
Drian to Gate Voltage (RGS = 1Ω). . . . . . . . . . . . . . . . . . . .. . . .VDGR
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . .. . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . TL
(At distance 1/8 in. (3.17mm) from seating plane for 10s max)
Drian to Gate Voltage (RGS = 1Ω). . . . . . . . . . . . . . . . . . . .. . . .VDGR
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . .. . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . TL
(At distance 1/8 in. (3.17mm) from seating plane for 10s max)
2N6897 Features
• -12A, -100V
• rDS(ON) = 0.3Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• rDS(ON) = 0.3Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
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