2N60

Features:

·RDS(ON) = 3.8Ω@V_GS = 10V.
·Ultra Low gate charge (typical 9.0nC)
·Low reverse transfer capacitance (Crss = typical 5.0 pF)
·Fast switching capability
·Avalanche energy specified
·Improved dv/dt capability, high ruggedness




Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±30	V
Avalanche Current (Note 2)		IAR	2.0	A
Drain Current Continuous	TC = 25	ID	2.0	A
	TC = 100		1.26	A
Drain Current Pulsed (Note 2)		IDP	8.0	A
Avalanche Energy	Repetitive(Note 2)	EAR	4.5	mJ
	Single Pulse(Note 3)	EAS	140	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	V/ns
Total Power Dissipation	TC = 25	PD	45	W
	Derate above 25		0.36	W/
Junction Temperature		TJ	+150
Storage Temperature		TSTG	-55 ~ +150

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J = 25
4. I_SD 2.4A, di/dt 200A/µs, V_DD BV_DSS, Starting T_J = 25

Description

 

The 2N60 is the abbreviation of UTC2N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features of the UTC2N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 5.0 pF);(5)ultra low gate charge (typical 9.0 nC);(6)RDS(ON)=3.8 @VGS=10 V.

The absolute maximum ratings of the UTC2N60 can be summarized as:(1)drain-source voltage:600 V;(2)gate-source voltage:±30 V;(3)avalanche current:2.0 A;(4)continuous drain current (Tc=25°C):2.0 A;(5)continuous drain current (Tc=100°C):1.26 A;(6)pulsed drain current:8 A;(7)avalanche energy single pulsed:140 mJ;(8)avalanche energy repetitive:4.5 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:45 W;(11)junction temperature:+150 ;(12)storage temperature:-55 to +150 ;(13)operating temperature:-55 to +150 . If you want to know more information such as the electrical character-istics about the UTC2N60, please download the datasheet in www.seekic.com or www.chinaicmart.com .

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.