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MFG:FAIRCHILD  Package Cooled:TO-251  

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Part Number: 2N60

 

MFG: FAIRCHILD

Package Cooled: TO-251

 

Description: The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low ...


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2N60 General Description


The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

2N60 Maximum Ratings

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

2.0

A

Drain Current Continuous TC = 25

ID

2.0

A

TC = 100

1.26

A

Drain Current Pulsed (Note 2)

IDP

8.0

A

Avalanche Energy Repetitive(Note 2)

EAR

4.5

mJ

Single Pulse(Note 3)

EAS

140

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Total Power Dissipation TC = 25

PD

45

W

Derate above 25

0.36

W/

Junction Temperature

TJ

+150

Storage Temperature

TSTG

-55 ~ +150

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25
4. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25

2N60 Features

·RDS(ON) = 3.8Ω@VGS = 10V.
·Ultra Low gate charge (typical 9.0nC)
·Low reverse transfer capacitance (Crss = typical 5.0 pF)
·Fast switching capability
·Avalanche energy specified
·Improved dv/dt capability, high ruggedness

2N60 datasheet

2N6027
PDF/DataSheet Download

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