2N6027

Off-State Leakage Current @ VDRM IDRM :
On-State RMS Current (It RMS) :
Forward Voltage Drop :
Gate Trigger Voltage (Vgt) :
Holding Current (Ih Max) :
Packaging :
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Gate Peak Inverse Voltage : 5 V
Gate Trigger Current (Igt) : 50 mA
Breakover Current IBO Max : 5 A
Rated Repetitive Off-State Voltage VDRM : 40 V


Specifications

Rating	Symbol	Value	Unit
*Power Dissipation Derate Above 25°C	PF 1/JA	300 4	mW mW/°C
*DC Forward Anode Current Derate Above 25°C	IT	150 2.67	mA mA/°C
*DC Gate Current	IG	±50	mA
Repetitive Peak Forward Current 100 ms Pulse Width, 1% Duty Cycle *20 ms Pulse Width, 1% Duty Cycle	ITRM	1 2	Amps
Non-repetitive Peak Forward Current 10 ms Pulse Width	ITSM	5	Amps
*Gate to Cathode Forward Voltage	VGKF	40	Volts
*Gate to Cathode Reverse Voltage	VGKR	5	Volts
*Gate to Anode Reverse Voltage	VGAR	40	Volts
*Anode to Cathode Voltage(1)	VAK	±40	Volts
Operating Junction Temperature Range	TJ	50 to +100	°C
*Storage Temperature Range	Tstg	55 to +150	°C

Parameters:

Technical/Catalog Information	2N6027
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Voltage - Offset (Vt)	1.6V
Current - Gate to Anode Leakage (Igao)	10nA
Current - Peak	2A
Current - Valley (Iv)	50A
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6027 2N6027