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The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram
2STW1695 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-140
V
VCEO
Collector-emitter voltage (IB = 0)
-140
V
VEBO
Emitter-base voltage (IC = 0)
-6
V
IC
Collector current
-10
A
ICM
Collector peak current (tP < 5 ms)
-20
A
Ptot
Total dissipation at Tc = 25
100
W
Tstg
Storage temperature
-65 to 150
Tj
Max. operating junction temperature
150
2STW1695 Features
` High breakdown voltage VCEO = -140 V ` Complementary to 2STW4468 ` Typical ft = 20 MHz ` Fully characterized at 125
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage.
2STW4468 Maximum Ratings
SYMBOL
VALUE
UNIT
VCBO
Collector-base voltage (IE = 0)
200
V
VCEO
Collector-emitter voltage (IB = 0)
140
V
VEBO
Collector-emitter voltage (IB = 0)
6
V
IC
Collector current
10
A
ICM
Collector peak current (tP < 5 ms)
20
A
Ptot
Total Power Dissipation @ TC=25
150
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
2STW4468 Features
High breakdown voltage VCEO = 140 V Complementary to 2STW1695 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC