2ST5949

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 250 V
Package / Case : TO-3
Maximum Operating Frequency : 25 MHz
Maximum DC Collector Current : 17 A


Features:

High breakdown voltage V_CEO = 250 V
Complementary to 2ST2121
Fast-switching speed
Typical ft = 25 MHz
Fully characterized at 125


Application

Audio power amplifier


Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-base voltage (IE = 0)	250	V
VCEO	Collector-emitter voltage (IB = 0)	250	V
VEBO	Emitter-base voltage (IC = 0)	6	V
IC	Collector current	17	A
ICM	Collector peak current (tP < 5ms)	34	A
PTOT	Total dissipation at Tc = 25	220	W
Tstg	Storage temperature	-65 to 150
TJ	Max. operating junction temperature	150

Description

The 2ST5949 is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Parameters:

Technical/Catalog Information	2ST5949
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	17A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Frequency - Transition	25MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2ST5949 2ST5949 497 6953 ND 4976953ND 497-6953