3LN01M-TL-E, 3LN01M-TR, 3LN01N Selling Leads, Datasheet
MFG:SANYO Package Cooled:SOT-423 D/C:09+
3LN01M-TL-E, 3LN01M-TR, 3LN01N Datasheet download

Part Number: 3LN01M-TL-E
MFG: SANYO
Package Cooled: SOT-423
D/C: 09+
MFG:SANYO Package Cooled:SOT-423 D/C:09+
3LN01M-TL-E, 3LN01M-TR, 3LN01N Datasheet download

MFG: SANYO
Package Cooled: SOT-423
D/C: 09+
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PDF/DataSheet Download
Datasheet: 3LN01C
File Size: 42569 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 3LN01C
File Size: 42569 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 3LN01C
File Size: 42569 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
3LN01N is a kind of N-Channel silicon mosfet.Now we give you some information about the features.The ON-resistance is low.It has ultrahigh-speed switching.It has 2.5V drive.
You have to get some detail information about the maximum ratings if you want to purchase the product.There are seven maximum ratings at Ta=25.The VDSS (Drain-to-Source Voltage) is 30 V.The VGSS (Gate-to-Source Voltage) is ±10 V.The ID (Drain Current(DC)) is 0.15 A.The IDP (Drain Current (Pulse)) is 0.6 A under the condition of PW10s, duty cycle1%. The PD (Allowable Power Dissipation) is 0.4 W.The Tch (Channel Temperature) is 150 .The Tstg (Storage Temperature) ranges from -55 to +150 .
The following is about the electrical characteristics at Ta=25.The minimum V(BR)DSS (Drain-to-Source Breakdown Voltage) is 30 V under the condition of ID=1mA, VGS=0.The maximum IDSS (Zero-Gate Voltage Drain Current) is 10 s under the condition of VDS=30V, VGS=0.The maximum IGSS (Gate-to-Sourse Leakage Current) is ±10 mA under the condition of VGS=±8V, VDS=0.The minimum VGS(off) (Cutoff Voltage) is 0.4 V and the maximum is 1.3 V under the condition of VDS=10V, ID=100A.The typical Ciss (Input Capacitance) is 7.0 pF under the condition of VDS=10V, f=1MHz. The typical Coss (Output Capacitance) is 5.9 pF under the condition of VDS=10V, f=1MHz.
The typical Crss (Reverse Transfer Capacitance) is 2.3 pF under the condition of VDS=10V, f=1MHz.The typical Qg
(Total Gate Charge) is 1.58 nC under the condition of VDS=10V, VGS=10V, ID=150mA.The typical Qgs (Gate-to-Source Charge) is 0.26 nC under the condition of VDS=10V, VGS=10V, ID=150mA.The typical Qgd (Gate-to-Drain "Miller" Charge) is 0.31 nC under the condition of VDS=10V, VGS=10V, ID=150mA.The typical VSD (Diode Forward Voltage) is 0.87 V and the maximum is 1.2 V under the condition of IS=150mA, VGS=0 V.
