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The A16-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability.
his single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.
A16-2 Maximum Ratings
Parameter
Absolute Maximum
Storage Temperature
62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+8 V
Continuous Input Power
+13 dBm
Short Term Input power 1 minute max.)
50 mW
Peak Power (3 Fsec max.)
0.5 W
"S" Series Burn-In Temperature (case)
+125ºC
A16-2 Features
• LOW NOISE: 3.5 dB (TYP.) • HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts • GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW • LOW VSWR: <1.5:1 (TYP.)