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A3211ELHLT-T, A3212, A3212E LH

Table of contents:
Info of A3211ELHLT-T
Info of A3212
Info of A3212E LH

A3211ELHLT-T, A3212, A3212E LH Selling Leads, Datasheet

MFG:Allegro Microsystems Inc Category:Sensors, Transducers Package Cooled:2009+ROHS D/C:17000

A3211ELHLT-T, A3212, A3212E LH Datasheet download

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Part Number: A3211ELHLT-T

Category: Sensors, Transducers

MFG: Allegro Microsystems Inc

Package Cooled: 2009+ROHS

D/C: 17000

Description: IC SWITCH HALL EFFECT SOT23W

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A3211ELHLT-T Parameters

Technical/Catalog Information	A3211ELHLT-T
Vendor	Allegro Microsystems Inc
Category	Sensors, Transducers
Package / Case	SOT23W
Packaging	Tape & Reel (TR)
Voltage - Supply	2.7 V ~ 3 V
Current	10A
Operational Type	Bipolar
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	A3211ELHLT T A3211ELHLTT 620 1036 2 ND 62010362ND 620-1036-2

A3212 General Description

The A3211 and A3212 integrated circuits are ultrasensitive, pole independent Hall-effect switches with latched digital output. These sensors are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordless telephones, pagers, and palmtop computers. A 2.5 to 3.5 V operation and a unique clocking scheme reduce the average operating power requirements to less than 15 µW with a 2.75 V supply.

Unlike other Hall-effect switches, either a north or south pole of sufficient strength will turn the output on in the A3212, and in the absence of a magnetic field, the output is off. The A3211 provides an inverted output. The polarity independence and minimal power requirements allow these devices to easily replace reed switches for superior reliability and ease of manufacturing, while eliminating the requirement for signal conditioning.

Improved stability is made possible through chopper stabilization (dynamic offset cancellation), which reduces the residual offset voltage normally caused by device overmolding, temperature dependencies, and thermal stress.

This device includes on a single silicon chip a Hall-voltage generator, small-signal amplifier, chopper stabilization, a latch, and a MOSFET output. Advanced CMOS processing is used to take advantage of low-voltage and low-power requirements, component matching, very low input-offset errors, and small component geometries.

Four package styles provide magnetically optimized solutions for most applications. Miniature low-profile surface-mount package types EH and EL (0.75 and 0.50 mm nominal height) are leadless, LH is a 3-pin low-profile SMD, and UA is a three-pin SIP for through-hole mounting. Packages are lead (Pb) free (suffix, ) with 100% matte tin plated leadframes.

A3212 Maximum Ratings

Micropower Operation
Operate with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
Solid-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence

A3212 Features

Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
    Superior Temperature Stability
    Extremely Low Switch-Point Drift
     Insensitive to Physical Stress
ESD Protected to 5 kV
Sol id-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence

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