A3209E

Features: SpecificationsDescriptionThis is the description about A3209E and A3210E of the micropower, ultra-sensitive hall-effect switches. The A3209E and A3210E integrated circuits are ultra-sensitive, pole independent hall-effect switches with a latched digital output. They are especially suite...

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SeekIC No. : 004260167 Detail

A3209E: Features: SpecificationsDescriptionThis is the description about A3209E and A3210E of the micropower, ultra-sensitive hall-effect switches. The A3209E and A3210E integrated circuits are ultra-sensi...

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Part Number:
A3209E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:






Specifications






Description

This is the description about A3209E and A3210E of the micropower, ultra-sensitive hall-effect switches.

The A3209E and A3210E integrated circuits are ultra-sensitive, pole independent hall-effect switches with a latched digital output. They are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordless telephones, pagers, and palmtop computers. 2.5 volt to 3.5 volt operation and a unique clocking scheme to reduce the average operating power requirements the a3209ex to 400 uw, the a3210ex to 25 uw! Except for operating duty cycle and average operating current, the a3209ex and a3210ex are identical. Unlike other hall-effect switches, either a north or south pole of sufficient strength will turn the output on; in the absence of a magnetic field, the output is off. The polarity independence and minimal power requirement allows these devices to easily replace reed switches for superior reliability and ease of manufacturing, while eliminating the requirement for signal conditioning. Improved stability is made possible through chopper stabilization (dynamic offset cancellation), which reduces the residual offset voltage normally caused by device overmolding, temperature dependencies, and thermal stress. These devices include on a single silicon chip a hall-voltage generator, small-signal amplifier, chopper stabilization, a latch, and a mosfet output. Advanced bicmos processing is used to take advantage of low-voltage and low-power requirements, component matching, very low input-offset errors, and small component geometries.

Here are the features of A3209E and A3210E. (1) micropower operation; (2) operate with north or south pole; (3) 2.5 v to 3.5 v battery operation; (4) chopper stabilized superior temperature stability extremely low switch-point drift insensitive to physical stress; (5) ESD protected to 5 kv; (6) solid-state reliability; (7) small size; (8) easily manufacturable with magnet pole independence.

At present there is not too much information about this model A3209E and A3210E. If you are willing to find more about the A3209E and A3210E, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us






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