AM1214-100, AM1214-200, AM1214-300 Selling Leads, Datasheet
MFG:ASI D/C:07+
AM1214-100, AM1214-200, AM1214-300 Datasheet download
Part Number: AM1214-100
MFG: ASI
Package Cooled:
D/C: 07+
AM1214-100, AM1214-200, AM1214-300
- Table of contents:
Info of AM1214-100
Info of AM1214-200
Info of AM1214-300
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About AM1214-100
PDF/DataSheet Download
Datasheet: AM1214-100
File Size: 35929 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About AM1214-200
PDF/DataSheet Download
Datasheet: AM1214-200
File Size: 58913 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About AM1214-300
PDF/DataSheet Download
Datasheet: AM1214-300
File Size: 94353 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
AM1214-100 General Description
The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures.
AM1214-100 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC 100°C) | 270 | W |
| IC | Device Current* | 13.5 | A |
| VCC | Collector-Supply Voltage* | 32 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
AM1214-200 General Description
The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPAC] hermetic metal/ceramic package with internal input/output matching structures.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPAC] hermetic metal/ceramic package with internal input/output matching structures.
AM1214-200 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC 100°C) | 575 | W |
| IC | Device Current* | 16 | A |
| VCC | Collector-Supply Voltage* | 40 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
AM1214-300 General Description
The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM1214-300 is supplied in the BIGPAC] Hermetic Metal/Ceramic package with internal Input/Output matching structures.
AM1214-300 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC 100°C) | 730 | W |
| IC | Device Current* | 18.75 | A |
| VCC | Collector-Supply Voltage* | 55 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
