AM80912-030, AM80912-085, AM80912-150 Selling Leads, Datasheet
MFG:ASI
AM80912-030, AM80912-085, AM80912-150 Datasheet download
Part Number: AM80912-030
MFG: ASI
Package Cooled:
D/C:
AM80912-030, AM80912-085, AM80912-150
- Table of contents:
Info of AM80912-030
Info of AM80912-085
Info of AM80912-150
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About AM80912-030
PDF/DataSheet Download
Datasheet: AM80912-030
File Size: 96258 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About AM80912-085
PDF/DataSheet Download
Datasheet: AM80912-085
File Size: 67725 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About AM8
PDF/DataSheet Download
Datasheet: AM8
File Size: 417268 KB
Manufacturer:
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AM80912-030 General Description
The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM80912-030 is supplied in the hermetic metal/ ceramic package with internal input matching structures.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM80912-030 is supplied in the hermetic metal/ ceramic package with internal input matching structures.
AM80912-030 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC 85°C) | 75 | W |
| IC | Device Current* | 3.5 | A |
| VCC | Collector-Supply Voltage* | 40 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
AM80912-085 General Description
The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
AM80912-085 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC 100°C) | 300 | W |
| IC | Device Current* | 8.0 | A |
| VCC | Collector-Supply Voltage* | 40 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
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