AM80610-030

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 57 W IC Device Current* 3.0 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature 200 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM80610-030 is a high power, c...

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AM80610-030: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 57 W IC Device Current* 3.0 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature ...

floor Price/Ceiling Price

Part Number:
AM80610-030
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC 50°C) 57 W
IC Device Current* 3.0 A
VCC Collector-Supply Voltage* 32 V
TJ Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.

AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.

The AM80610-030 is provided in the industrystandard, metal/ceramic AMPACTM  hermetic package.


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