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The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical.
The AOP800 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWM applications. Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications). AOP800L is a Green Product ordering option. AOP800 and AOP800L are electrically identical.
AOP800 Maximum Ratings
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain
Current A
TA=25°C
ID
9.3
A
TA=100°C
7.5
Pulsed Drain Current B
IDM
40
Power Dissipation A
TA=25°C
PDSM
2.5
W
TA=100°C
1.6
Junction and Storage Temperature Range
TJ,TSTG
-55 to 150
°C
AOP800 Features
VDS (V) = 30V ID = 9.3A (VGS = 10V) R DS(ON) < 18m (VGS = 10V) R DS(ON) < 28m (VGS = 4.5V)