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The AS186-302 is a GaAs FET IC SPDT non-reflective switch packaged in a MSOP-8 exposed pad plastic package for low cost, high isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical.Typical applications include GSM, PCS, WCDMA, 2.4 GHz ISM and 3.5 GHz wireless local loop.
AS186-302 Maximum Ratings
Characteristic
Value
RF Input Power
1 W Max. > 500 MHz 0/-8 V
Control Voltage
-0.2 V, +8 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
JC
25°C/W
AS186-302 Features
Positive Voltage Control (0/+3 to 0/+5 V) High Isolation (55 dB @ 0.9 GHz and 1.9 GHz) Miniature MSOP-8 Exposed Pad Package Three Switch Solution for Base Station Synthesizer Switch Non-Reflective Operation to 6 GHz
GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC4.0 GHz
The AS186-302 is a GaAs FET IC SPDT non-reflective switch packaged in a MSOP-8 exposed pad plastic package for low cost, high isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical.Typical applications include GSM, PCS, WCDMA, 2.4 GHz ISM and 3.5 GHz wireless local loop.
AS186-302LF Maximum Ratings
Positive Voltage Control (0/+3 to 0/+5 V)
High Isolation (55 dB @ 0.9 GHz and 1.9 GHz)
Miniature MSOP-8 Exposed Pad Package
Three Switch Solution for Base Station Synthesizer Switch