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The ATF-13336 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16 GHzfrequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.
ATF-13336 Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum
VDS
Drain-Source Voltage
V
+5
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-6
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
225
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
ATF-13336 Features
* Low Noise Figure:1.4 dB Typical at 12? GHz * High Associated Gain:9.0 dB Typical at 12 GHz * High Output Power:17.5 dBm Typical P1 dB at 12?GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging option Available[1]