ATF-10736

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{CASE TEMPERATURE} = 25°C.
3. Derate at 2.9 mW/°C for T_CASE > 25°C.
4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.

The ATF-10736 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.

This GaAs FET device ATF-10736 has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.