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The ATF-25570 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a hermetic, high reliabil-ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
ATF-25570 Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VDS
Drain Source Voltage
V
+7
VGS
Gate Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-8
ID
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
450
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature[4]
°C
-65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 3.3 mW/°C for TCASE > 40°C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
ATF-25570 Features
• High Output Power: 20.5 dBm Typical P1 dB at 4EGHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0EdB Typical at 4EGHz • Hermetic Gold-Ceramic Microstrip Package
ATF-25735 General Description
The ATF-25735 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
ATF-25735 Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VDS
Drain Source Voltage
V
+7
VGS
Gate Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-8
ID
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
450
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature[4]
°C
-65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASETEMPERATURE = 25°C. 3. Derate at 3 mW/°C for TCASE > 29°C. 4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
ATF-25735 Features
• High Output Power: 19.0EBm Typical P 1 dB at 4EGHz • High Gain: 12.5ÊdB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic Microstrip Package