BC817DPN, BC817DS, BC817U Selling Leads, Datasheet
MFG:NXP Package Cooled:2009+ROHS D/C:30000
BC817DPN, BC817DS, BC817U Datasheet download

Part Number: BC817DPN
MFG: NXP
Package Cooled: 2009+ROHS
D/C: 30000
MFG:NXP Package Cooled:2009+ROHS D/C:30000
BC817DPN, BC817DS, BC817U Datasheet download

MFG: NXP
Package Cooled: 2009+ROHS
D/C: 30000
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PDF/DataSheet Download
Datasheet: BC817DPN
File Size: 80062 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BC817DS
File Size: 68323 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BC817U
File Size: 46709 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per transistor; for the PNP transistor with negative polarity | |||||
| VCBO | collector-base voltage | open emitter | - | 50 | V |
| VCEO | collector-emitter voltage | open base | - | 45 | V |
| VEBO | emitter-base voltage | open collector | - | 5 | V |
| IC | collector current (DC) | - | 500 | mA | |
| ICM | peak collector current | - | 1 | A | |
| IBM | peak base current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb 25 °C;note 1 | - | 370 | mW |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 | ||
| Per device | |||||
| Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 600 | mW |

| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per transistor unless otherwise specified | |||||
| VCBO | collector-base voltage | open emitter | - | 50 | V |
| VCEO | collector-emitter voltage | open base | - | 45 | V |
| VEBO | emitter-base voltage | open collector | - | 5 | V |
| IC | collector current (DC) | - | 500 | mA | |
| ICM | peak collector current | - | 1 | A | |
| IBM | peak base current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb 25 °C;note 1 | - | 370 | mW |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 | ||
| Per device | |||||
| Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 600 | mW |


| Parameter | Symbol | Values | Unit |
| Collector-emitter voltage | VCEO | 45 | V |
| Collector-base voltage | VCBO | 50 | |
| Emitter-base voltage | VEBO | 5 | |
| DC collector current | IC | 500 | mA |
| Peak collector current | ICM | 1 | A |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | |
| Total power dissipation, TS = 115 °C |
Ptot | 330 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 ... 150 |

