BC807

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Application

* Suitable for AF-Driver stages and low power output stages
* Complement to BC817/BC818




Pinout






Specifications

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage	VCBO	-50	V
Collector-Emitter Voltage	VCEO	-45	V
Emitter-Base Voltage	VEBO	-5	V
Peak Pulse Current	ICM	-1	A
Continuous Collector Current	IC	-500	mA
Base Current	IB	-100	mA
Peak Base Current	IBM	-200	mA
Power Dissipation at Tamb =25°C	Ptot	300	mW
Operating and Storage Temperature Range	Tj :Tstg	-55 to +150

Description

Bipolar transistors BC807, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)

BC807 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.

There are some maximum ratings about BC807.(1): collector-emitter voltage(VCEO) is 45 Vdc(open base and Ic is 10 mA); (2): collector-base voltage(VCBO)is -50 Vdc(open emitter); (3): emitter-base voltage(VEBO) is -5.0 Vdc(open collector); (4): collector current-DC(Ic) is -500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides,there are still some electrical characteristics about BC807 when Ta is 25 unless otherwise noted.Off characteristics: (1): collector cutoff current(ICBO) is -100 nA max when VCB is -20 V and IE is 0; (2): emitter cut-off gain(IEBO) is -100 nA max when Ic is 0 and VEB is -5 V; (3): DC current gain(hFE) is 100 min and 600 max when VCE is -1 V and Ic is -100 mA;(4): collector emitter saturation voltage(VCE(sat)) is -700 mV max when Ic is -500 mA and IB is -50 mA; (5): base emitter voltage(VBE) is -1200 mV max when Ic is -500 mA and VCE is -1 V; (6): transition frequency(fT) is 80 MHz min when Ic is -10 mA, VCE is -5 V and f is 100 MHz.