BDL1508HW, BDL31, BDL32 Selling Leads, Datasheet
MFG:Infineon Package Cooled:06+ D/C:TO-3P
BDL1508HW, BDL31, BDL32 Datasheet download
Part Number: BDL1508HW
MFG: Infineon
Package Cooled: 06+
D/C: TO-3P
BDL1508HW, BDL31, BDL32
- Table of contents:
Info of BDL1508HW
Info of BDL31
Info of BDL32
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About BDL31
PDF/DataSheet Download
Datasheet: BDL31
File Size: 44354 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BDL31
PDF/DataSheet Download
Datasheet: BDL31
File Size: 44354 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BDL32
PDF/DataSheet Download
Datasheet: BDL32
File Size: 56818 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BDL31 General Description
NPN BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. PNP complement: BDL32.
BDL31 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCEO | collector-emitter voltage | open base | - | 10 | V |
| VEBO | emitter-base voltage | open collector | - | 6 | V |
| IC | collector current (DC) | - | 5 | mA | |
| ICM | peak collector current | - | 10 | A | |
| IBM | peak base current | - | 1 | A | |
| Ptot | total power dissipation | Tamb 25 °C | - | 1.35 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 |
BDL31 Features
* High current (max. 5 A)
* Low voltage (max. 10 V)
* Low collector-emitter saturation voltage ensures reduced power consumption.
* Low voltage (max. 10 V)
* Low collector-emitter saturation voltage ensures reduced power consumption.
BDL31 Typical Application
* Battery powered units where high current and low power consumption are important.
BDL31 Connection Diagram
BDL32 General Description
PNP BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. NPN complement: BDL31.
BDL32 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | -15 | V |
| VCEO | collector-emitter voltage | open base | - | -10 | V |
| VEBO | emitter-base voltage | open collector | - | -5 | V |
| IC | collector current (DC) | - | -5 | mA | |
| ICM | peak collector current | - | -10 | A | |
| IBM | peak base current | - | -1 | A | |
| Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 1.35 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 |
BDL32 Features
* High current (max. 5 A)
* Low voltage (max. 10 V)
* Low collector-emitter saturation voltage ensures reduced power consumption.
* Low voltage (max. 10 V)
* Low collector-emitter saturation voltage ensures reduced power consumption.
BDL32 Typical Application
* Battery powered units where high current and low power consumption are important.
BDL32 Connection Diagram
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