BLW73, BLW76, BLW77 Selling Leads, Datasheet
MFG:MOT/PH/ST/SS Package Cooled:CAN3 D/C:05+
BLW73, BLW76, BLW77 Datasheet download
Part Number: BLW73
MFG: MOT/PH/ST/SS
Package Cooled: CAN3
D/C: 05+
BLW73, BLW76, BLW77
- Table of contents:
Info of BLW73
Info of BLW76
Info of BLW77
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About BLW29
PDF/DataSheet Download
Datasheet: BLW29
File Size: 70830 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW76
PDF/DataSheet Download
Datasheet: BLW76
File Size: 92540 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW77
PDF/DataSheet Download
Datasheet: BLW77
File Size: 120222 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLW76 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load
mismatch conditions. Transistors are delivered in matched hFE groups.
The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW76 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCESM | max. | 70v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 35v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current (average) | IC(AV) | max. | 8 A | ||
| Collector current (peak value); f > 1 MHz | ICM | max. | 20 A | ||
| D.C. and r.f. (f > 1 MHz) power | |||||
| dissipation; Tmb = 25 °C | Ptot ,Prf | max. | 140 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW76 Connection Diagram
BLW77 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCESM | max. | 70v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 35v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current (average) | IC(AV) | max. | 12 A | ||
| Collector current (peak value); f > 1 MHz | ICM | max. | 30 A | ||
| D.C. and r.f. (f > 1 MHz) power | |||||
| dissipation; Tmb = 25 °C | Ptot ,Prf | max. | 245 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW77 Features
N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load
mismatch conditions. Transistors are delivered in matched hFE groups.
The transistor has a1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
mismatch conditions. Transistors are delivered in matched hFE groups.
The transistor has a1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW77 Connection Diagram
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