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BUF405AFI, BUF405AFP, BUF410

BUF405AFI, BUF405AFP, BUF410 Selling Leads, Datasheet

MFG:PHIL/ST/MOT  Package Cooled:TO-220  D/C:06+

BUF405AFI, BUF405AFP, BUF410 Picture

BUF405AFI, BUF405AFP, BUF410 Datasheet download

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Part Number: BUF405AFI

 

MFG: PHIL/ST/MOT

Package Cooled: TO-220

D/C: 06+

 

 

 
 
 
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BUF405AFI Suppliers

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About BUF03AJ

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Datasheet: BUF03AJ

File Size: 127658 KB

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BUF405AFP Suppliers

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About BUF405AFP

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Datasheet: BUF405AFP

File Size: 53159 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About BUF410

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Datasheet: BUF410

File Size: 71187 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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BUF405AFI General Description

·High Voltage
·High Speed Switching

BUF405AFI Maximum Ratings

SYMBOL PARAMETER VALUE UNIT
VCES Collector-Emitter Voltage
VBE=-1.5V
1000 V
VCEO Collector-Emitter Voltage 450 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current-Continuous 7.5 A
ICM Collector Current-Peak 15 A
IB Base Current-Continuous 3 A
IBM Base Current-Peak 4.5 A
PC Collector Power Dissipation
@ TC=25
40 W
TJ Junction Temperature 150 °C
Tstg Storage Temperature Range -65~150 °C

BUF405AFI Typical Application

·Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies.

BUF405AFP General Description

These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz; this helps to simplify designs and improve reliability. The superior switching performance and low crossover losses reduce dissipation and consequently lowers the equipment operating temperature.

BUF405AFP Maximum Ratings

Symbol
Parameter
Value
Unit
BUF405A
BUF405AFP
VCEV
Collector-Emitter Voltage (VBE = -1.5 V)
1000
V
VCEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
7.5
A
ICM
Collector Peak Current (tp < 5 ms)
15
A
IB
Base Current
3
A
IBM
Base Peak Current (tp < 5 ms)
4.5
A
Ptot
Total Dissipat ion at Tc = 25 oC
80
39
W
Tstg
Storage Temperature
-65 to 150
Tj
Max Operation Junction Temperature
150

BUF405AFP Features

 HIGH SWITCHING SPEED NPN POWER TRANSISTORS
 EASY TO DRIVE
 HIGH VOLTAGE FOR OFF-LINE APPLICATIONS
 100 KHz SWITCHING SPEED
 LOW COST DRIVE CIRCUITS
 LOW DYNAMIC SATURATION

BUF405AFP Typical Application

 SWITCH MODE POWER SUPPLIES
 MOTOR DRIVERS

BUF410 General Description

The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

The BUF series is designed for use in high-frequency power supplies and motor control applications.

BUF410 Maximum Ratings

Symbol
Parameter
Value
Unit
VCEV
Collector-Emitter Voltage (VBE = -1.5V)
850
V
VCEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
15
A
ICM
Collector Peak Current (tp < 5 ms)
30
A
IB
Base Current
3
A
IBM
Base Peak Current (tp < 5 ms)
4.5
A
Ptot
Total Dissipation at Tc = 25 1
125
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150

BUF410 Features

 SGS-THOMSON PREFERRED SALESTYPE
 HIGH VOLTAGE CAPABILITY
 VERY HIGH SWITCHING SPEED
 MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
 LOW BASE-DRIVE REQUIREMENTS

BUF410 Typical Application

 SWITCH MODE POWER SUPPLIES
 MOTOR CONTROL

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