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The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
The BUF series is designed for use in high-frequency power supplies and motor control applications.
BUF420AW Maximum Ratings
Symbol
Parameter
Value
Unit
VCEV
Collector-Emitter Voltage (VBE = -1.5V)
1000
V
VCEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
30
A
ICM
Collector Peak Current (tp < 5 ms)
60
A
IB
Base Current
6
A
IBM
Base Peak Current (tp < 5 ms)
9
A
Ptot
Total Dissipation at Tc = 25
200
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BUF420AW Features
· STMicroelectronics PREFERRED SALESTYPE · HIGH VOLTAGE CAPABILITY · VERY HIGH SWITCHING SPEED · MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION · LOW BASE-DRIVE REQUIREMENTS