BUX39, BUX40, BUX40A Selling Leads, Datasheet
MFG:ST D/C:05+
MFG:ST D/C:05+
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Datasheet: BUX39
File Size: 21258 KB
Manufacturer: SEME-LAB [Seme LAB]
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PDF/DataSheet Download
Datasheet: BUX40
File Size: 11569 KB
Manufacturer: SEME-LAB [Seme LAB]
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PDF/DataSheet Download
Datasheet: BUX10
File Size: 64591 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
VCBO | Collector Base Voltage | 120V |
VCEX | Collector Emitter Sustaining Voltage @ VBE = 1.5V | 120V |
VCER | Collector Emitter Voltage @ RBE = 100W | 110V |
VCEO(sus) | Collector Emitter Sustaining Voltage | 90V |
VEBO | Emitter Base Voltage | 7V |
IC | Collector Current | 30A |
ICM | Peak Collector Current | 40A |
IB | Base Current | 6A |
Ptot | Total Power Dissipation Derate above 25 |
120W 0.68 W / |
Tstg, Tj | Maximum Junction and Storage Temperature Range | 65 to 100 |
TL | Lead Temperature 1/32 inch (0.8 mm) for 10 sec. max. | 230 |
The BUX39 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed.
This device is especially suitable for switchingcontrol amplifiers, power gates, switching regulators, powerswitching circuits converters, inverters and control circuits.
Other recommended applications include DCRF amplifiers and power oscillators.
Parameter | Symbol | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 160 | V |
Collector-to-Emitter Voltage | VCEO(SUS) | 125 | V |
Emitter-to-Base Voltage | VEBO | 7 | V |
Collector Current-Continuous | IC | 20 | A |
Collector Current-Peak | ICM | 28 | A |
Base Current-Continuous | IB | 4 | mA |
Collector Power Dissipation @TC=100 |
PC | 120 | W |
Junction Temperature | Tj | 200 | °C |
Storage Temperature | Tstg | -65 to +150 | °C |