BUX10

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Maximum Operating Temperature : + 200 C
Packaging : Bulk
Maximum DC Collector Current : 25 A
Package / Case : TO-3
Maximum Operating Frequency : 8 MHz (Min)
Collector- Emitter Voltage VCEO Max : 125 V


Features:

· SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH CURRENT CAPABILITY
· FAST SWITCHING SPEED




Application

· MOTOR CONTROL
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector Base Voltage(IE = 0)	160V	V
VCEX	Collector Emitter Voltage (VBE = 1.5V)	160V	V
VCEO	Collector Emitter Voltage (IB = 0)	125V	V
VEBO	Emitter Base Voltage(Ic = 0)	7V	V
IC	Collector Current	25	A
ICM	Collector Peak Current(tp = 10 ms)	30	A
IB	Base Current	5	A
Ptot	Total Power Dissipation at Tcase 25	150	W
Tstg	Maximum Junction and Storage Temperature Range	-65 to 200
Tj	Junction Temperature	200

Description

The BUX10 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.