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BYG60M, BYG70J, BYG80A

Table of contents:
Info of BYG60M
Info of BYG70J
Info of BYG80A

BYG60M, BYG70J, BYG80A Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:SMA D/C:0450+

BYG60M, BYG70J, BYG80A Datasheet download

Five Points

Part Number: BYG60M

MFG: PHILIPS

Package Cooled: SMA

D/C: 0450+

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BYG60M General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG60M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			1000	V
V_R	continuous reverse voltage			1000	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		1.90 0.90 0.65	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		25	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		7	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG60M Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* UL 94V-O classified plastic package
* Shipped in 12 mm embossed tape.

BYG60M Connection Diagram

BYG70J General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG70J Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			600	V
V_R	continuous reverse voltage			600	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		600 0.53 0.39	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		20	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		10	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG70J Features

BYG70J Connection Diagram

BYG80A General Description

DO-214AC surface mountable package with glass passivated chip.The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG80A Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage			50	V
VR	continuous reverse voltage			50	V
IF(AV)	average forward current	Ttp = 100 °C; see Figs 2, 3 and 4 averaged over any 20 ms period; see also Figs 17, 18 and 19		2.4	A
IF(AV)	average forward current	Tamb =60 °C; AL2O3 PCB mounting (see Fig.27); see Figs 5, 6 and 7 averaged over any 20 ms period; see also Figs 17, 18 and 19		1.25	A

BYG80A Features

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