CNW83, CNW84, CNW85 Selling Leads, Datasheet
MFG:QTC Package Cooled:DIP-6 D/C:97+
CNW83, CNW84, CNW85
- Table of contents:
Info of CNW83
Info of CNW84
Info of CNW85
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About CNW83
PDF/DataSheet Download
Datasheet: CNW83
File Size: 57828 KB
Manufacturer: QT [QT Optoelectronics]
Download : Click here to Download
About CNW84
PDF/DataSheet Download
Datasheet: CNW84
File Size: 57828 KB
Manufacturer: QT [QT Optoelectronics]
Download : Click here to Download
About CNW85
PDF/DataSheet Download
Datasheet: CNW85
File Size: 57828 KB
Manufacturer: QT [QT Optoelectronics]
Download : Click here to Download
CNW83 Features
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
CNW83 Typical Application
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
CNW84 Features
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
CNW84 Typical Application
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
CNW85 Features
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
CNW85 Typical Application
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
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