CPU1477C, CPU165MF, CPU165MK Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
CPU1477C, CPU165MF, CPU165MK Datasheet download
Part Number: CPU1477C
MFG: IR
Package Cooled: N/A
D/C: 2010+
MFG:IR Package Cooled:N/A D/C:2010+
CPU1477C, CPU165MF, CPU165MK Datasheet download
MFG: IR
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: CPU001-BB
File Size: 88809 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: CPU165MF
File Size: 510254 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: CPU165MK
File Size: 94944 KB
Manufacturer: IRF [International Rectifier]
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The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter |
Max. |
Units | |
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C |
Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT |
600 42 23 120 120 15 120 ±20 2500 83 33 |
V A µs V VRMS W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. |
300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) |
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability.
Parameter |
Max. |
Units | |
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C |
Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT |
600 33 17 100 100 15 100 10 ± 20 2500 83 33 |
V A µs V VRMS W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. |
300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) |