DG442AZ/883B, DG442B, DG442C/D Selling Leads, Datasheet
MFG:MAX Package Cooled:DIP-16 D/C:2010+
DG442AZ/883B, DG442B, DG442C/D Datasheet download
Part Number: DG442AZ/883B
MFG: MAX
Package Cooled: DIP-16
D/C: 2010+
DG442AZ/883B, DG442B, DG442C/D
- Table of contents:
Info of DG442AZ/883B
Info of DG442B
Info of DG442C/D
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About DG401
PDF/DataSheet Download
Datasheet: DG401
File Size: 94431 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About DG442B
PDF/DataSheet Download
Datasheet: DG442B
File Size: 107033 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About DG442C/D
PDF/DataSheet Download
Datasheet: DG442C/D
File Size: 184320 KB
Manufacturer: MAXIM
Download : Click here to Download
DG442B General Description
The DG441B/442B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG441B/442B are upgrades to the original DG441/442.
Combing low on-resistance (45 , typ.) with high speed (tON 120 ns, typ.), the DG441B/442B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.
The DG441B/442B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.
Combing low on-resistance (45 , typ.) with high speed (tON 120 ns, typ.), the DG441B/442B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.
The DG441B/442B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.
DG442B Maximum Ratings
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
Digital Inputsa VS, VD . . .. . . . .. . . . . . . . .. . . . .. . . .. . . .. . .. (V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) .. . . . . . . . . .. . . . . . .. . . . . .. . . . . .. . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . .. . . .. . .. . .... .. .. . . .. . . 100 mA
Storage Temperature . . . . . . . . . . . . .. . . . . . . . . .. . .. . . . . .. . .. . . .. . -65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . .. . . . . . . . .. . . . . . . . . .. . . . . . . . . . . .. . . 470 mW
16-Pin Narrow Body SOICd . . . . . . . .. . . . . . . .. . .. . . . . . . . .. . . . . .. . . . . 900 mW
QFN-16d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . 850 mW
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
Digital Inputsa VS, VD . . .. . . . .. . . . . . . . .. . . . .. . . .. . . .. . .. (V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) .. . . . . . . . . .. . . . . . .. . . . . .. . . . . .. . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . .. . . .. . .. . .... .. .. . . .. . . 100 mA
Storage Temperature . . . . . . . . . . . . .. . . . . . . . . .. . .. . . . . .. . .. . . .. . -65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . .. . . . . . . . .. . . . . . . . . .. . . . . . . . . . . .. . . 470 mW
16-Pin Narrow Body SOICd . . . . . . . .. . . . . . . .. . .. . . . . . . . .. . . . . .. . . . . 900 mW
QFN-16d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . 850 mW
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DG442B Features
*Low On-Resistance: 45
*Low Power Consumption: 1.0 mW
*Fast Switching Action-tON: 120 ns
*Low Charge Injection-Q: -1 pC
*TTL/CMOS-Compatible Logic
*Single Supply Capability
*Low Power Consumption: 1.0 mW
*Fast Switching Action-tON: 120 ns
*Low Charge Injection-Q: -1 pC
*TTL/CMOS-Compatible Logic
*Single Supply Capability
DG442B Typical Application
*Audio Switching
*Data Acquisition
*Sample-and-Hold Circuits
*Communication Systems
*Automatic Test Equipment
*Medical Instruments
*Data Acquisition
*Sample-and-Hold Circuits
*Communication Systems
*Automatic Test Equipment
*Medical Instruments
DG442B Connection Diagram
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