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EGF1A, EGF1B, EGF1D

EGF1A, EGF1B, EGF1D Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:N/A  D/C:dc03

EGF1B Picture

EGF1A, EGF1B, EGF1D Datasheet download

Five Points

Part Number: EGF1B

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: dc03

Description: DIODE FAST GPP 1A 200V SMA

Price Break

7500

Unit Price

.10080

Extended Price

756.00

(All prices are in USD) Prices for reference only
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About EGF1A

PDF/DataSheet Download

Datasheet: EGF1A

File Size: 93593 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About EGF1B

PDF/DataSheet Download

Datasheet: EGF1B

File Size: 93593 KB

Manufacturer: GE [General Semiconductor]

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About EGF1D

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Datasheet: EGF1D

File Size: 93593 KB

Manufacturer: GE [General Semiconductor]

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EGF1A Parameters

Technical/Catalog InformationEGF1A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)50V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr10A @ 50V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
PackagingTape & Reel (TR)
Capacitance @ Vr, F15pF @ 4V, 1MHz
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EGF1A
EGF1A

EGF1A General Description

EGF1A thru EGF1D datasheet

EGF1A Maximum Ratings

SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts

Maximum average forward rectified current
at TL=125°C

I(AV)
1.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.0
Volts
Maximum DC reverse current TA=25°C
at rated DC blocking voltage TA=125°C
IR
5.0
50.0
A
Typical reverse recovery time (NOTE 1)
trr
50.0
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
RQJA
RQJL
85.0
30.0
°C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
°C

NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

EGF1A Features

· Plastic package has Underwriters Laboratory Flammability Classification 94V-0
· Ideal for surface mount automotive applications
· High temperature metallurgically bonded construction
· Superfast recovery times for high efficiency
· Glass passivated cavity-free junction
· Built-in strain relief
· Easy pick and place
· High temperature soldering guaranteed: 450°C/5 seconds at terminals
· Complete device submersible temperature of 265°C for 10 seconds in solder bath

EGF1B Parameters

Technical/Catalog InformationEGF1B
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr10A @ 100V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
PackagingCut Tape (CT)
Capacitance @ Vr, F15pF @ 4V, 1MHz
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EGF1B
EGF1B
EGF1BCT ND
EGF1BCTND
EGF1BCT

EGF1B General Description

EGF1A thru EGF1D datasheet

EGF1D Parameters

Technical/Catalog InformationEGF1D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr10A @ 200V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
PackagingTape & Reel (TR)
Capacitance @ Vr, F15pF @ 4V, 1MHz
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EGF1D
EGF1D

EGF1D General Description

EGF1A thru EGF1D datasheet

EGF1D Maximum Ratings

SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts

Maximum average forward rectified current
at TL=125°C

I(AV)
1.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.0
Volts
Maximum DC reverse current TA=25°C
at rated DC blocking voltage TA=125°C
IR
5.0
50.0
A
Typical reverse recovery time (NOTE 1)
trr
50.0
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
RQJA
RQJL
85.0
30.0
°C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
°C

NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

EGF1D Features

· Plastic package has Underwriters Laboratory Flammability Classification 94V-0
· Ideal for surface mount automotive applications
· High temperature metallurgically bonded construction
· Superfast recovery times for high efficiency
· Glass passivated cavity-free junction
· Built-in strain relief
· Easy pick and place
· High temperature soldering guaranteed: 450°C/5 seconds at terminals
· Complete device submersible temperature of 265°C for 10 seconds in solder bath

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