MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:QFP D/C:QFP
EGOIND3.0, EGOZS919E, EGP10A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: QFP
D/C: QFP
Description: DIODE FAST GPP 1A 50V DO-41
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Datasheet: EGP10A
File Size: 73056 KB
Manufacturer: ETC [ETC]
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| Technical/Catalog Information | EGP10A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 950mV @ 1A |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 5A @ 50V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Axial |
| Package / Case | DO-41, Axial |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | EGP10A EGP10A |
|
SYMBOLS |
EGP 10A |
EGP 10B |
EGP 10C |
EGP 10D |
EGP 10F |
EGP 10G |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
150 |
200 |
300 |
400 |
Volts |
| Maximum RMS voltage |
VRMS |
35 |
70 |
105 |
140 |
210 |
280 |
Volts |
| Maximum DC blocking voltage |
VDC |
50 |
100 |
150 |
200 |
300 |
400 |
Volts |
| Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55 |
I(AV) |
1.0 |
Amp | |||||
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load |
IFSM |
30.0 |
Amps | |||||
| Maximum instantaneous forward voltage at 1.0A |
VF |
0.95 |
1.25 |
Volts | ||||
| Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR |
5.0 100 |
mA | |||||
| Maximum reverse recovery time (NOTE 1) |
trr |
50.0 |
ns | |||||
| Typical junction capacitance (NOTE 2) |
CJ |
22.0 |
15.0 |
pF | ||||
| Typical thermal resistance (NOTE 3) |
RJA |
50.0 |
/W | |||||
| Operating junction and storage temperature range |
TJ, TSTG |
-65 to +150 |
||||||
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